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InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth, ii) flux zone growth, and iii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples. Flux zone technique is suitable for good crystallization but crystal sizes are limited to ~5mm. In contrast, Brigmann method offers good crystallinity as well as large size (larger than 1cm). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency.
Properties of InSe crystals by 2Dsemiconductors USA
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上海巨納科技有限公司 公司地址：上海市虹口區寶山路778號海倫國際大廈5樓 技術支持：化工儀器網掃一掃 更多精彩
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